Product Summary

The 2N2914 is a dual NPN planar transistor in TO77 package.

Parametrics

2N2914 absolute maximum ratings: (1)Collector – Base Voltage: 45 V; (2)Collector – Emitter Voltage: 45 V; (3)Emitter – Base Voltage: 6 V; (4)Continuous Collector Current: 30; (5)Total Device Dissipation TAMB = 25℃: 300 mW; (6)Total Device Dissipation TC = 25℃: 750 mW; (7)Storage Temperature Range: -65 to 200 ℃; (8)Lead temperature (Soldering, 10 sec.): 300 ℃.

Features

2N2914 electrical characteristics: (1)Collector – Base Breakdown Voltage: 45 V; (2)Collector – Emitter Breakdown Voltage: 45 V; (3)Emitter – Base Breakdown Voltage: 6 V; (4)Collector Cut-off Current: 10 nA; (5)Collector Cut-off Current: 2 nA; (6)Emitter Cut-off Current: 2 nA; (7)DC Current Gain: 600; (8)Base – Emitter Voltage: 0.70 V; (9)Collector – Emitter Saturation Voltage: 0.35 V.

Diagrams

2N2914 Dimensions diagram

Image Part No Mfg Description Data Sheet Download Pricing
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2N2914
2N2914

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2N2904
2N2904

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2N2904A
2N2904A

Central Semiconductor

Transistors Bipolar (BJT) PNP Gen Pur SS

Data Sheet

0-1: $0.76
1-25: $0.71
25-100: $0.67
100-250: $0.62
2N2904AL
2N2904AL

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2N2904U
2N2904U

Other


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2N2904U1
2N2904U1

Other


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2N2905
2N2905

STMicroelectronics

Transistors Bipolar (BJT) USE 511-2N2905A TO-39 PNP GEN PUR SS

Data Sheet

Negotiable