(China (Mainland))
Product Summary
The K6T1008C2E-TB70 is a CMOS SRAM. The K6T1008C2E-TB70 is fabricated by SAMSUNG advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6T1008C2E-TB70 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN,VOUT: -0.5 to 7.0 V; (2)Voltage on Vcc supply relative to Vss VCC: -0.5 to 7.0 V; (3)Power Dissipation PD: 1.0 W; (4)Storage temperature TSTG: -65 to 150℃; (5)Operating Temperature TA: 0 to 70℃.
Features
K6T1008C2E-TB70 features: (1)Process Technology: TFT; (2)Organization: 128Kx8; (3)Power Supply Voltage: 4.5~5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R.
Diagrams
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 K6T1008C2C |
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K6T1008C2E |
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Negotiable |
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K6T1008C2E-L |
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Negotiable |
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K6T1008U2C |
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Negotiable |
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